首页> 外文会议>International symposium on Physical design >introduction to electromigration-aware physical design
【24h】

introduction to electromigration-aware physical design

机译:认识电迁移的物理设计简介

获取原文

摘要

Electromigration is increasingly relevant to the physical design of electronic circuits. It is caused by excessive current density stress in the interconnect. The ongoing reduction of circuit feature sizes has aggravated the problem over the last couple of years. It is therefore an important reliability issue to consider electromigration-related design parameters during physical design. In this talk, we give an introduction to the electromigration problem and its relationship to current density. We then present various physical design constraints that affect electromigration. Finally, we introduce components of an electromigration-aware physical design flow.
机译:电迁移与电子电路的物理设计越来越相关。这是由互连中过大的电流密度应力引起的。在过去的几年中,不断减小的电路特征尺寸使问题变得更加严重。因此,在物理设计过程中考虑与电迁移相关的设计参数是一个重要的可靠性问题。在本演讲中,我们将介绍电迁移问题及其与电流密度的关系。然后,我们介绍了影响电迁移的各种物理设计约束。最后,我们介绍了可识别电迁移的物理设计流程的各个组成部分。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号