首页> 外文会议>International Conference on Wireless and Optical Communications, 2005. 14th Annual WOCC 2005 >Application of tin-doped cadmium oxide films in CdTe/CdS solarcells
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Application of tin-doped cadmium oxide films in CdTe/CdS solarcells

机译:掺锡氧化镉薄膜在CdTe / CdS太阳能中的应用细胞

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Transparent conducting tin-doped cadmium oxide films (CdO:Sn) havebeen deposited by metalorganic chemical vapor deposition (MOCVD) atatmospheric pressure. The effects of various deposition parameters, suchas the partial pressures of DMCd and TMT, and substrate temperature, onthe electrical and optical properties of as-deposited films werestudied. A sheet resistance of 14~17 Ω/sq was obtained for a filmthickness of 125 nm. The high conductivity of the as-deposited films wasdue to their high carrier concentrations. The transmission of the filmsin the visible range (500-850 nm) was found to be high (80~95%). Bothelectrical and optical properties of the as-deposited films improvedafter annealing in H2 or He ambient. CdTe/CdS solar cellshave been fabricated using CdO:Sn as the front contact and a conversionefficiency of 14.3% has been obtained
机译:透明导电掺杂锡的氧化镉薄膜(CdO:Sn)具有 通过金属有机化学气相沉积(MOCVD)沉积在 气压。各种沉积参数的影响,例如 DMCd和TMT的分压以及基板温度 沉积薄膜的电学和光学性质为 研究过。薄膜的薄层电阻为14〜17Ω/ sq 厚度为125 nm。沉积膜的高电导率是 由于它们的载流子浓度高。电影的传播 发现在可见光范围内(500-850nm)的高(80〜95%)。两个都 沉积薄膜的电学和光学性能得到改善 在H 2 或He环境中退火后。 CdTe / CdS太阳能电池 已使用CdO:Sn作为正面触点并进行了转换 效率为14.3%

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