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The Effect of the Effective Channel Length Induced by Plasma Etching

机译：等离子体刻蚀对有效沟道长度的影响

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《Next Generation Internet Networks, 2005 》|2005年|p.105-108|共4页
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Yang S.H.; Lan C.Y.; Pang S.L.; Chang B.J.; Lu K.L.; Liu J.S.; Yang J.J.;
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1. Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes [J] . Masanaga Fukasawa, Hiroyasu Matsugai, Takahiro Honda, Japanese journal of applied physics . 2013 ,第5Issue3期

机译：等离子体刻蚀过程中氢化氮化硅/硅结构中光子诱导的界面缺陷的波长依赖性
2. Effect of plasma poly etch on effective channel length and hot carrier reliability in submicron transistors [J] . Xiaoyu Li, Divakaruni R. IEEE Electron Device Letters . 1994 ,第4期

机译：等离子多晶硅蚀刻对亚微米晶体管有效沟道长度和热载流子可靠性的影响
3. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching [J] . Yamada Shinji, Omori Masato, Sakurai Hideki, Annales de l'I.H.P . 2020 ,第1期

机译：在电感耦合等离子体反应离子蚀刻中的多步 - 偏压蚀刻来减少血浆诱导的N型GaN损伤
4. The Effect of the Effective Channel Length Induced by Plasma Etching [C] . Yang, S.H., Lan, . 2001

机译：等离子体刻蚀对有效沟道长度的影响
5. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage [D] . Ding, Ruhang 2008

机译：硅/硅锗化物异质结构的各向异性碳氟化合物等离子体刻蚀和等离子体刻蚀引起的侧壁损伤
6. Effective Oxygen Reduction Reaction Performance of FeCo Alloys In Situ Anchored on Nitrogen-Doped Carbon by the Microwave-Assistant Carbon Bath Method and Subsequent Plasma Etching [O] . Mincong Liu, Feng Yu, Cunhua Ma, 2019

机译：微波辅助碳浴法及随后的等离子刻蚀法将FeCo合金原位固定在掺氮碳上的有效氧还原反应性能
7. Optimization of selective laser-induced etching (SLE) for fabrication of 3D glass microfluidic device with multi-layer micro channels [O] . Sungil Kim, Jeongtae Kim, Yeun-Ho Joung, 2019

机译：用多层微通道制造3D玻璃微流体装置的选择性激光诱导蚀刻（SLE）的优化
8. Effects of Plasma Induced Damage on the Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching (RIE) and Plasma Ashing Processes. [R] . Ahn, H., Ji, H., Mun, J., 2003

机译：等离子体诱导损伤对离子注入Gaas mEsFET在反应离子刻蚀（RIE）和等离子体灰化过程中通道层的影响。

The Effect of the Effective Channel Length Induced by Plasma Etching

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