Silicon-germanium-boron amorphous alloy on p-type Si as infraredSchottky detector

摘要

In this work, Schottky barriers obtained from the SiGeB alloy onp-Si are demonstrated and proposed as photoemissive infraredphotodetectors. The SiGeB alloy is obtained by PECVD at 300° C, thesource gases used were SiH₄, GeF₄ andB₂H₆. The resulting barrier height when depositedonto p-Si is determined from I-V measurements and ranges from 0.7 to0.38 eV. The main parameter in the barrier height control is thedeposition pressure