Photoluminescence and cathodoluminescence of ion implanted ZnS andZnGa₂O₄ phosphors

摘要

Summary form only given. Photoluminescence (PL) andcathodoluminescence (CL) characteristics of ion implanted ZnS and ZnGa₂O₄ phosphors have been investigated. The host ZnSmaterial was prepared by chemical vapor deposition and ZnGa₂O₄ thin films were deposited by RF sputtering. We havedemonstrated high efficiency, well-saturated red, green, and blue PL andCL in ZnGa₂O₄ thin films implanted with Eu⁺, Mn⁺, and Ga⁺ ions, respectively. Ourresults indicate that the luminescence of these phosphors is criticallydependent on the post-implantation annealing conditions. High efficiencygreen and blue PL and CL have been demonstrated in ion implantedZnS:Cu,Al and ZnS:Ag,Al, respectively. We have shown that telluriumimplantation produces a red shift of the characteristic pi, in ZnS:Mn⁺² (using 325 nm HeCd laser) from 588 nm to 652 nm; the sameZnS(Te):Mn films under CL excitation show a more moderate shift towardthe red. Selenium implantation has also been used successfully to modifyZnS phosphor host material and extend its PL and CL color gamut