首页> 外文会议>Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International >Effect of porosity on reducing cohesive strength and accelerating crack growth in ultra low-k thin-films IC interconnect applications
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Effect of porosity on reducing cohesive strength and accelerating crack growth in ultra low-k thin-films IC interconnect applications

机译:孔隙率对降低超低k薄膜的内聚强度和加速裂纹扩展的影响IC互连应用

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The reliable fabrication of interconnects containing nanoporous low dielectric constant (LKD) films has proven to be a significant technological challenge. The LKDs are brittle in nature and susceptible to stress corrosion cracking in reactive aqueous environments. Moreover, nearly all levels of processing involve subjecting these extremely fragile materials to mechanical loads in the presence of harsh aqueous solutions, such as chemical mechanical planarization (CMP). Here we demonstrate how controlled volume fractions of nanometer scale porosity reduces the cohesive strength of LKDs and significantly accelerates the rate of crack growth in both simulated and commercial CMP solutions.
机译:包含纳米孔低介电常数(LKD)薄膜的互连件的可靠制造已被证明是一项重大的技术挑战。 LKD本质上是脆性的,并且在反应性水性环境中易受应力腐蚀开裂的影响。此外,几乎所有级别的处理都涉及在存在苛刻水溶液(例如化学机械平面化(CMP))的情况下,使这些极易碎的材料承受机械负荷。在这里,我们证明了受控体积分数的纳米级孔隙率如何降低LKD的内聚强度,并显着提高模拟和商用CMP解决方案中的裂纹扩展速率。

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