CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

摘要

In this article, we investigated the impact of chemical mechanical polishing (CMP) on an ultra low dielectric constant (ultra low-k) material Porous-Polysilazane (PPSZ) with slurries of metal polishing during interconnect manufacture process. Since the CMP processing of metals such as TaN and Cu are inevitable steps for interconnect fabrication, we have utilized two types of slurries (marked as TaN and Cu slurries) to evaluate their effects on the dielectric properties of PPSZ films. Electrical and material analyses have shown surface planarity and dielectric properties of PPSZ films will not be degraded during these metal CMP processes. This indicates that the ultra low-k PPSZ films are promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology.