HEMT integrated circuits; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; modules; 43.5 to 45.5 GHz; InGaAs-InAlAs-InP; InGaAs-InAlAs-InP HEMT low noise amplifiers; MMICs; RF performance; compact Q-band low noise a;
机译:超低噪声0.1微米T型栅极InAlAs-InGaAs-InP HEMT
机译:高效94-GHz 0.15- / splμ/ m InGaAs / InAlAs / InP单片功率HEMT放大器
机译:采用0.1μmInGaAs / InAlAs / InP HEMT技术的高性能,低直流功率V波段MMIC LNA
机译:0.1 / SPL MU / M INGAAS / INALAS / INP HEMT低噪声放大器,具有紧凑堆叠式级联设计及其去偏置效应诱导故障(DBIF)
机译:使用新型InGaAs / InAlAs / InP pHEMT的低于0.5 dB NF宽带低噪声放大器
机译:0.1um Inp HEmT器件和用于从x波段到W波段的低温低噪声放大器的mmIC