Influence of strain-compensating and strain-mediating layers on the optical properties of MOVPE-grown GaInNAs single quantum-well structures

摘要

In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.