This paper discusses several aspects of the performance of advanced Si-based RF transistors. The RF performance of SiGe HBTs and Si RF MOSFETs is reviewed and compared to that of III-V RF transistors. The speed - breakdown voltage tradeoff which is typical for bipolar transistors is discussed with special emphasis on SiGe HBTs. On the field-effect transistor side, we review the performance of state-of-the-art Si RF MOSFETs and show that these devices are highly competitive in terms of speed and cutoff frequency.
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