We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlOx-based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated
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机译：我们在这里报告了采用90 nm CMOS前端逻辑工艺的新一代高磁阻比（MR）磁隧道结（MTJ）材料的首次集成。这种具有MgO隧道势垒的新材料比基于AlO x 的标准材料显着提高了读取信号。 90 nm CMOS测试工具具有1个1T1MTJ存储单元的8 kb阵列，其中两个正交编程线与位易轴成45度角，以进行拨动切换。演示了读写操作
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