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Defect detection under realistic leakage models using multiple IDDQ measurements

机译:使用多个I DDQ 测量在实际泄漏模型下进行缺陷检测

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IDDQ or steady state current testing has been extensively used in the industry as a mainstream defect detection and reliability screen. The background leakage current has increased significantly with the advent of ultra deep submicron technologies. The increased background leakage makes it difficult to use single threshold IDDQ testing to differentiate defect-free chips from those with defects that draw small amount of currents. Several techniques that improve the resolution of IDDQ testing have been proposed to replace the single threshold detection scheme. However, even these techniques are challenged to detect defects in the presence of leakage currents in excess of a few mA. All of these techniques use a single IDDQ measurement per circuit configuration for detection and thus the scalability of these techniques is limited. Quiescent signal analysis (QSA) is a novel IDDQ defect detection and diagnosis technique that uses IDDQ measurements at multiple chip supply pads. Implicit in our methodology is a leakage calibration technique that scales the total leakage current over multiple simultaneous measurements. This helps in decreasing the background leakage component in individual measurements and thus increases the resolution of this technique to subtle defects. The effectiveness of this technique is demonstrated in This work using simulation experiments on portion of a production power grid. Predicted chip size and leakage values from the International Technology Roadmap for semiconductors (ITRS) are used in these experiments. The performance of the proposed technique is evaluated using three different intra-die process variation distribution models.
机译:I DDQ 或稳态电流测试已在业界广泛用作主流缺陷检测和可靠性屏幕。随着超深亚微米技术的出现,背景漏电流已大大增加。背景漏电流的增加使得难以使用单阈值I DDQ 测试来将无缺陷的芯片与那些具有消耗少量电流的缺陷的芯片区分开。已经提出了几种提高I DDQ 测试分辨率的技术来代替单一阈值检测方案。但是,即使在泄漏电流超过几个mA的情况下,即使检测这些缺陷也要挑战这些技术。所有这些技术对每个电路配置都使用单个I DDQ 测量来进行检测,因此这些技术的可扩展性受到限制。静态信号分析(QSA)是一种新颖的I DDQ 缺陷检测和诊断技术,该技术在多个芯片电源焊盘上使用I DDQ 测量。我们的方法中隐含着一种泄漏校准技术,该技术可以在多个同时测量中缩放总泄漏电流。这有助于减少单个测量中的背景泄漏分量,从而提高了该技术对细微缺陷的分辨率。在这项工作中,通过对生产电网的一部分进行仿真实验,证明了该技术的有效性。这些实验使用了国际半导体技术路线图(ITRS)预测的芯片尺寸和泄漏值。使用三种不同的晶粒内工艺变化分布模型来评估所提出技术的性能。

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