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Novel CMOS low-loss transmission line structure

机译:新型CMOS低损耗传输线结构

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As operating speeds increase low-loss interconnect structures such as transmission lines become critical in the design of RF and high speed digital circuits. This paper presents a novel low-loss transmission line structure. We discuss the importance of transmission line structures, including coplanar and grounded coplanar structures. Grounded coplanar waveguide (GCPW) structures are enhanced to reduce the substrate loss. The primary goal of new interconnect topology, stacked GCPW (S-GCPW), is to reduce the loss by shaping the electric fields under the signal line. 3D electromagnetic wave simulations are used to verify the efficacy of the new transmission line structures. The insertion loss for a 4 mm long S-GCPW structure is 1.62 dB@50 GHz (0.41dB/mm) while the insertion loss for a 4 mm long traditional GCPW structure is 3.28 dB (0.82 dB/mm) in a 0.12 μm SOI CMOS technology.
机译:随着工作速度的提高,诸如RF的低损耗互连结构在RF和高速数字电路的设计中变得至关重要。本文提出了一种新颖的低损耗传输线结构。我们讨论了传输线结构(包括共面和接地共面结构)的重要性。接地共面波导(GCPW)结构得到增强,以减少基板损耗。堆叠GCPW(S-GCPW)是新的互连拓扑的主要目标,是通过对信号线下方的电场进行整形来减少损耗。 3D电磁波仿真用于验证新型传输线结构的功效。在0.12μmSOI中,4 mm长的S-GCPW结构的插入损耗为1.62 dB @ 50 GHz(0.41dB / mm),而4mm长的传统GCPW结构的插入损耗为3.28 dB(0.82 dB / mm) CMOS技术。

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