RF HCI testing methodology and lifetime model establishment

摘要

In this study, we have established a good correlation between RF (f/sub T/) and DC (Idsat, Idlin, g/sub m/ and Vth) performance degradation due to Hot Carrier using Chartered's 0.18 /spl mu/m technology. With the established correlation, we propose an efficient method to predict the RF HCI lifetime from the DC parameter degradation of the transistors. In addition, the HCI lifetime of the RF parameter, f/sub T/ is predicted using the Substrate Current Lifetime Model. A good fit is observed indicating that the traditional lifetime models can be extended to the RF spectrum.