Terahertz nonlinearities in semiconductor quantum wells

机译：半导体量子阱中的太赫兹非线性

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摘要

Results for terahertz/optical sum/difference-frequency generation (terahertz-sideband generation) in quantum wells are presented. This may provide the basis for frequency-shifting devices in the near infrared or visible with shifts on the order of 1 THz.

机译：给出了量子阱中太赫兹/光学和/差分频率生成（太赫兹边带生成）的结果。这可以为近红外或可见光中频移设备提供基础，频移约为1 THz。

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《Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on》|2004年|p.73-74|共2页
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Citrin D.S.;
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中图分类无线电电子学、电信技术;
关键词
gallium arsenide; aluminium compounds; III-V semiconductors; semiconductor quantum wells; optical frequency conversion; submillimetre wave generation; absorption coefficients; terahertz nonlinearities; semiconductor quantum wells; terahertz frequency generation; optical sum frequency generation; difference frequency generation; terahertz sideband generation; frequency shifting devices; 1 THz; GaAs-AlGaAs;

机译：砷化镓;铝化合物; III-V族半导体;半导体量子阱;光频率转换;亚毫米波产生;吸收系数;太赫兹非线性;半导体量子阱;太赫兹频率产生;光和频率产生;差频率产生;太赫兹边带产生;移频装置; 1 THz; GaAs-AlGaAs;

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Terahertz nonlinearities in semiconductor quantum wells

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