Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices

摘要

Planarization of semi-insulating InP by TBCl assisted LP-MOVPE has been achieved on high (< 5 /spl mu/m) ridges. Full planarization at the whole width between adjacent ridges was obtained for various epitaxial conditions and independent form the ridge form. Fabrication of first modulator devices confirms the high potential of this technique for the development of high-speed optoelectronic components.