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Polymeric substrate microcrystalline-silicon strain sensor

机译:聚合物基板微晶硅应变传感器

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Metallic foil and semiconductor piezoresistors are frequently used as strain sensors in shape or strain monitoring applications. The sensors are typically connected in a Wheatstone bridge configuration and mounted on the surface or body to be tested. Semiconductor sensors, for example crystalline silicon, can provide good strain sensitivity with significantly reduced sensor area and also reduced bridge power compared to metal resistor bridges. a-Si:H strain sensors fabricated on glass substrates have recently been demonstrated (G. de Cesare et al, Thin Solid Films, vol. 427, p. 191, 2003). We report here the first microcrystalline-silicon (/spl mu/C-Si) strain sensors fabricated directly on flexible polyimide substrates with similar gage factor but very low power and higher yield compared to metallic strain sensor.
机译:金属箔和半导体压阻器经常在形状或应变监测应用中用作应变传感器。传感器通常以惠斯通电桥配置连接,并安装在要测试的表面或物体上。与金属电阻桥相比,半导体传感器(例如晶体硅)可以提供良好的应变敏感性,同时传感器面积显着减小,桥功率也降低。最近已经证明了在玻璃基板上制造的a-Si:H应变传感器(G. de Cesare等人,Thin Solid Films,第427卷,第191页,2003年)。我们在这里报告了第一个直接在柔性聚酰亚胺衬底上制造的微晶硅(/ spl mu / C-Si)应变传感器,其应变系数相似,但与金属应变传感器相比,功率非常低且产量更高。

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