首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE >V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications
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V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications

机译:使用商用GaAs pHEMT技术的V波段全集成TX / RX单芯片3-D MMIC,用于高速无线应用

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This paper demonstrates fully-integrated V-band single-chip transmitter and receiver 3D MMICs for high-speed wireless applications. These 3D MMICs provide full RF functions, including an oscillator, even though they are very compact. The transmitter MMIC realizes more than 10 dBm output power at 57-60 GHz, while the receiver MMIC achieves 33 dB conversion gain and less than 6 dB noise figure at the same frequency range. The chip sizes of the transmitter and the receiver are 2.89 mm/sup 2/ and 5.04 mm/sup 2/, respectively. The V-band fully-integrated MMICs promise much cheaper millimeter-wave RF equipment due to their high-integration level, compactness, and few interconnections for other components.
机译:本文演示了用于高速无线应用的完全集成的V波段单芯片发送器和接收器3D MMIC。这些3D MMIC即使具有非常紧凑的结构,也可以提供完整的RF功能,包括振荡器。发射器MMIC在57-60 GHz时可实现10 dBm以上的输出功率,而接收器MMIC在相同频率范围内可实现33 dB的转换增益和小于6 dB的噪声系数。发射器和接收器的芯片尺寸分别为2.89 mm / sup 2 /和5.04 mm / sup 2 /。 V波段完全集成的MMIC凭借其高集成度,紧凑性和与其他组件的很少互连而有望提供更便宜的毫米波RF设备。

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