首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE >Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe
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Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe

机译:在瑞典和欧洲开发用于高数据速率通信系统的60 GHz前端电路

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Recent results from a Swedish program for development of 60 GHz MMICs for high data rate communication links are presented as well as results from similar programs in Europe. A GaAs PHEMT technology has been used for the realization of front-end circuits such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs. The GaAs PHEMT technology proved to give excellent circuit results, with the exception of the VCOs. Different GaAs PHEMT based VCO-topologies such as common gate push-push Colpitt and balanced negative gm, optimized for low phase noise have therefore been studied extensively. The latest results proves that it is possible to design VCOs comparable with the best published HBT-based oscillators. The metamorphic HEMT technology can offer additional advantages such as lower power consumption and InP-HEMT performance at the cost of GaAs. Recent results on 60 GHz amplifiers and mixers based on this technology are presented.
机译:提出了瑞典瑞典计划的瑞典计划的最新结果,以及高数据速率通信链路的MICS以及来自欧洲类似程序的结果。 GaAs PHEMT技术已被用于实现前端电路,例如混合器,放大器,频率乘数,IF放大器,具有增益控制和VCOS。 GaAs PHEMT技术证明是vcos除外的优异电路结果。因此,已经广泛研究了用于低相位噪声的公共栅极推动Colpitt和平衡负GM等基于GaAs Phemt的VCo-拓扑,因此已经针对低相位噪声进行了优化。最新结果证明,可以设计与基于最佳的基于HBT的振荡器相当的VCO。变质HEMT技术可以提供额外的优点,例如GaAs成本的较低功耗和INP-HEMT性能。提出了基于该技术的60 GHz放大器和混合器的最新结果。

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