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1.5-V low supply voltage 43-Gb/s delayed flip-flop circuit

机译:1.5V低电源电压43Gb / s延迟触发器电路

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This paper reports the first low (1.5 V) supply voltage D-F/F able to run at a full rate of over 43 Gb/s. The proposed F/F circuitry incorporates parallel current switching together with inductive peaking, a combination that makes it suitable for over-43-Gb/s operation at a supply voltage as low as 1.5 V. The D-F/F, implemented through an InP-HBT process, provided 43 Gb/s error free operation with a large clock phase margin of 232 degrees. Moreover, the D-F/F produced a well-opened 50 Gb/s eye diagram. Power dissipation (P/sub diss/) of the D-F/F core circuit was reduced to 40 mW, which is less than one-tenth that of our conventional D-F/F. The F/F circuitry should help enable development of a low-P/sub diss/ 43 Gb/s full-rate module with a 1.5 V range supply voltage, which can be seamlessly connected with high-speed CMOS I/O circuits.
机译:本文报告了第一个低(1.5 V)电源电压D-F / F,它能够以超过43 Gb / s的全速率运行。拟议中的F / F电路将并联电流开关与电感峰值相结合,使之适合于在低至1.5 V的电源电压下以43 Gb / s的速度工作。DF / F通过InP-P实现。 HBT工艺可提供43 Gb / s的无错操作,并具有232度的大时钟相位余量。此外,D-F / F产生了张开的50 Gb / s眼图。 D-F / F核心电路的功耗(P / sub diss /)降低到40 mW,不到我们传统D-F / F的十分之一。 F / F电路应有助于实现具有1.5 V范围电源电压的低P / sub diss / 43 Gb / s全速率模块的开发,该模块可与高速CMOS I / O电路无缝连接。

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