首页> 外文会议>Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. IEEE/CPMT/SEMI 28th International >Wafer bumping technology for LDI application by electroless nickel plating
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Wafer bumping technology for LDI application by electroless nickel plating

机译:用于化学镀镍的LDI应用的晶圆凸点技术

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Electroless nickel layer has been used to provide an under bump metallization on the aluminum bond pads, as part of low cost wafer bumping process, prior to solder deposition. Recently, it has also found increasing use in wafer bumping for LDI(LCD for Drive IC) type device. However, the application of electroless nickel to the LDI wafer bumping is limited by the fact that bath stability of nickel is closely related with passivation opening size. In the present work, the effects of nickel bath parameters of stabilizer concentration, temperature and pH on the formation of electroless nickel bump have been investigated and optimum process conditions for LDI bumping were suggested. The measurements of bump surface and height distribution have been performed for the bump quality estimation by optical microscope and thickness profiler.
机译:在焊料沉积之前,作为低成本晶圆隆起工艺的一部分,化学镀镍层已用于在铝键合焊盘上提供隆起下金属化。最近,它还发现在LDI(用于驱动IC的LCD)型器件的晶片凸点中的使用越来越多。然而,由于镍的镀液稳定性与钝化开口尺寸密切相关的事实,限制了将化学镀镍应用于LDI晶片凸点。在目前的工作中,已研究了稳定剂浓度,温度和pH值对镍浴参数的影响对化学镀镍凸点的形成的影响,并提出了LDI凸点的最佳工艺条件。进行了凸块表面和高度分布的测量,以通过光学显微镜和厚度轮廓仪估算凸块质量。

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