Kinetic Monte Carlo simulation of thin film morphology evolution during growth

摘要

Investigations of surface relief evolution during deposition processes were carried out using Monte Carlo simulation. Different types of deposition processes were under consideration: molecular beam epitaxy on flat and porous surfaces, deposition on porous glass surfaces and atomic layer deposition (ALD). The influence of interlayer atomic exchange on two dimensional island density, average and maximum island sizes in different atomic layers were in question. Enlargement of island sizes with an increase in atomic layer number was demonstrated. Simulation was demonstrated to be useful for deposition parameters optimization in the process of thin dielectric barrier growth. For thin and flat dielectric layer formation over porous substrates, the diffusivity of adsorbate along the surface between pores was demonstrated to be much higher than along pore walls. Simulation of the ALD process of thin dielectric barrier formation shows the way for estimation of the minimal number of ALD cycles necessary for complete coverage of the substrate and evaluation of the surface roughness.