Prediction of the field radiated at one meter from PCB's and microprocessors from near EM field cartography

摘要

The paper shows a near field scanning method to characterize chips that leads to the prediction of the coupling phenomena on the electronic board and to the evaluation of the radiated emission at one meter. A theoretical model is first given for simple circuits. An estimation of the scalar and vector potentials is found with the EM scan. Using these results, we calculate the near and far emissions. Comparisons with experimental results are given. As a conclusion, we propose a simple model describing chip radiated emission and we show a real case use.