^4fCopper CMP Barrier Slurry System for 130 nm/90 nm New Process Development

摘要

^7fIn response to a wide range of CMP requirements for back end copper/ low-K integration approaches, we have developed a family of low-K barrier removal slurries. The key feature of this family is that the polish rates for individual films and selectivities between films are adjustable over a wide range. This tunability, which is created by adjusting the concentrations of five of the major constituents of the slurry, has been characterized in detail. With these slurries, good barrier removal rates are achieved and there can be a significant reduction of topography during the barrier removal step without compromising dielectric loss. Also, these formulations can produce low defect levels and excellent surface quality. The selectivity control that can be achieved with this family of slurries allows its application with both capped and uncapped low K integration approaches.