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Plasma Source Ion Implantation Technology for Engineering Surfaces of Materials

机译:材料工程表面等离子体源离子注入技术

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Plasma Source Ion Implantation (PSII) is a non-line-of-sight technique for energetic ion surface modification of materials. At the University of Wisconsin there are presently three PSH systems two of which measure about 1m~3 and a third that measures 0.1m~3. Plasma generation is achieved in vacuum through filamentary, RF, DC-pulsed, or glow discharge. High voltage pulsing is achieved using a tetrode modulator that pulses at up to 60kV or by a solid-state pulser that can supply 20kV. Recently, a crossatron modulator capable of 40kV and 1kA peak anode current was built in-house. Surface properties of a wide range of materials have been beneficially modified using PSH in ion implantation, film deposition, energetic ion mixing, and sputtering modes. Industrial field testing of PSII-treated parts has yielded promising results but successful commercialization requires judicious selection of applications which effectively exploit the unique aspects of PSH as a surface modification tool.
机译:等离子体源离子注入(PSII)是一种非视线技术,用于对材料进行高能离子表面改性。威斯康星大学目前有三个PSH系统,其中两个系统的大小约为1m〜3,第三个系统的大小为0.1m〜3。在真空中,通过丝状,RF,DC脉冲或辉光放电可实现等离子体生成。使用四极管调制器可产生高达60kV的脉冲,或使用可提供20kV的固态脉冲发生器来实现高电压脉冲。近来,内部已构建了能够产生40kV和1kA峰值阳极电流的交叉加速器调制器。在离子注入,薄膜沉积,高能离子混合和溅射模式下,使用PSH可以对多种材料的表面特性进行有益的修改。经PSII处理的零件的工业现场测试已取得了可喜的结果,但成功的商业化需要明智地选择应用程序,这些应用程序可有效利用PSH的独特方面作为表面改性工具。

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