A novel device concept termed the Double Gate Lateral Inversion Layer Emitter Transistor (DG LILET) is proposed and demonstrated experimentally. The device is based on a new physical injection mechanism. This is the use of a MOS inversion layer as a minority carrier injector. The DG ILET can operate in three distinctive modes, MOSFET, transistor and thyristor as function of the potentials applied to the cathode and anode gates. The device offers a high switching frequency, a large safe operating area and a flexible on-state operation and therefore is a promising candidate for high voltage, fast speed devices for integrated circuits.
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