首页> 外文会议>Electron Devices Meeting, 2001. IEDM Technical Digest. International >Effective on-current of MOSFETs for large-signal speed consideration
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Effective on-current of MOSFETs for large-signal speed consideration

机译:考虑大信号速度时MOSFET的有效导通电流

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To gauge the speed capability of a MOSFET, the maximum saturation on-current is usually quoted as an important parameter. Although the effect of the linear characteristics has been known to be important, it is the purpose of this paper to provide an analytical and a quantitative answer, using a simple circuit analysis. The results show that the charging/discharging time in the linear region is not small, and consequently that the drain saturation voltage to reach the saturation current is a critical parameter. A new parameter "effective on-current" is proposed which captures the linear characteristics in addition to the saturation current, and should be more indicative of the large-signal speed capability in digital circuits. Finally, the impacts of series resistance are also examined.
机译:为了衡量MOSFET的速度能力,通常将最大饱和导通电流作为重要参数。尽管已知线性特性的影响很重要,但本文的目的是使用简单的电路分析来提供分析和定量答案。结果表明,线性区域中的充电/放电时间不短,因此,达到饱和电流的漏极饱和电压是关键参数。提出了一个新的参数“有效导通电流”,该参数除了可以吸收饱和电流之外还可以捕获线性特性,并且应该更能表明数字电路中大信号速度的能力。最后,还研究了串联电阻的影响。

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