Patterning of Diamond Films by RIE and its MEMS Applications

摘要

CVD diamond film is an attractive potential material for microelectronics and MEMS applications, but patterning of diamond is one of the main difficulties hindering diamond electronics. In this paper, we studied the RIE process for precise patterning of diamond films. Ni/Cr, Cu/Cr or NiTi filsm were used as maskants, oxygen as reactive gas. The etching results showed that the NiTi filmm has high etching selectivity when used as mask for diamond etching and it is very convenient to be patterned by the special developed chemical etchant. Using O_2 as main etching gas, the RIE can etch the diamond film effectively. The process parameters such as RF power, vacuum pressure have marked influence on the etching rate and the etched surface. Consider the etching rate and the smoothness of the etched surface, the optimized process parameters for patterning of diamond films has been defined. Combined with sacrifice layer process and electroplating through mask technique diamond micro hinge has been fabricated on silicon wafer.