Annealing sstudies of solution-deposited ZrO_2 thin films on self-assembled monolayers

摘要

Thin films of ZrO_2 were deposited from aqueous solution on Si(100) substrates precovered by alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability and densification fo these films in the temperature range from room temperature to 750 deg C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution. Decreasing film thickness and increasing density is found upon annealing up to 750 deg C. A 25 nm film revealed the appearance of a mixed-phase crystalline structure at 800 deg C which disappeared upon cooling. Thereis no visible evidence of stress-induced microstructural changes, such as peeling or cracking.