Elements of an Advanced Pattern Generator for 130-100 nm Maskmaking

摘要

In response to next-generation mask requirements, ETec Systems, Inc. has developed a complete raster-based patterning solution to meet the production needs of the 130 nm IC device generation as well as those for early 100 nm production. In developing this new MEBES~circleR system, we have aimed at versatility, extendibility, and compatibility with conventional highcontrast resists and redesigned it from the ground up. This MEBES system incorporates many technological innovations, such as a new 50 kV electron-beam (e-beam) column, a new raster graybeam writing strategy, a new stage, an integrated automated material handling system, on-board diagnostics, and environmental/thermal control/ A discussion of architectural details of the new MEBES system designed to meet the tight requirements of 130-100 nm technology nodes is presented. This comprehensive patterning solution offers the best combination of benefits to the user in terrms of versatility, overall system throughput, and extendibility. Initial throughput and lithographic perofrmnace benchmarks are also presented and are very promising in predicting the ability to meet critical dimension (CD) uniformity requirements of 10 nm or better, as predicted by the ITRS requirements.