Optical column of the mask-scan eb mask writer test stand

摘要

A deficiency in throughput is one of the main problems for the post-100 nm generation mask writer. Mask-scan writing technology is one of the methods for increasing in the throughput. A large pattern is projected by scanning the electron beam (EB) over the mask pattern. We have developed a low aberration optical column to prove the concept of the mask-scan technology. We obtained the EB mask pattern image by scanning the electron beam over the mask. We confirmed the capability of the astigmatism correction by the bias voltage superposed on the main field deflectors.