Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities

摘要

The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.