ESD testing of GMR heads as a function of temperature is describe is described. Two different GMR designs are subjected to HBM ESD step stress testing to failure at a range of temperatures. The design tested are an IrMn GMR head and a PtMn GMR head. Results show that different designs of GMR heads produce significantly different failure trends as a function of temperature. The IrMn heads showed no significant reduction of either the magnetic or the resistive V_(HBM) failure points. These heads also exhibited a behavior termed "bias masking of pinned layer reversal". "Bia masking" occurred only beyond a certain substrate temperature where the pinned layer reversals due to injected ESD transients were no longer visible. This may be due to the setting or resetting of the pinned larer by the bias current. The PtMn heads showed a clear redction in both magnetic and resistive V_(HBM) points as a function of temperature. It is concluded that it is important and interesting to study the effects of temperature on the ESD behavior of GMR heads.
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