Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors

摘要

Abstract: Large area silicon drift detectors (SDD) with areas up to approximately 1 cm$+2$/ have been fabricated for x-rays. Recent novel designs have produced very low dark current, high electric field, and hence low noise and good charge collection. The developed structures were evaluated with low noise input amplification electronic components on Peltier coolers so that the temperature could be adjusted. Energy resolution of 143 eV FWHM at 5.9 keV was measured with a 50 mm$+2$/ SDD whose corresponding noise level was 70 eV FWHM. !24