Gamma-ray imaging detectors based on silicon drift detectors arrays coupled to a single scintillator

摘要

Arrays of Silicon Drift Detectors (SDDs) coupled to a single scintillator, according to the Anger Camera scheme, can be successfully employed in gamma-ray imaging. The low value of output capacitance of a SDD allows to reach a lower electronics noise with respect to conventional silicon photodiodes used in scintillation detection. A small prototype of gamma camera with sub-millimeter resolution has been realized by using a monolithic array of small SDDs (5 mm~2 each unit) with on-chip JFET. For the realization of gamma cameras of larger areas based on single units assembled in array, SDDs of 30 mm~2 of area with external JFET have been also experimented.