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Micromachining techniques at terahertz frequencies

机译:太赫兹频率的微加工技术

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Abstract: In this paper we have characterized the refractive indexed and absorption coefficient of negative photoresist NANO XP SU-8 from 0.1-1.6 THz using THz time-domain spectroscopy. Over the measured frequency range it was found that the refractive index is a relatively flat function of frequency, decreasing from 1.8 to 1.7. The value of absorption coefficient is seen to increase in a line fashion over the given frequency range, being 25 cm$+$MIN@1$/ at 1 THz. From this data we have extracted functions of dielectric constant and dielectric loss tangent versus frequency, quantities which will be of use for future THz circuit design. In addition to these measurements, we have demonstrated two novel applications of SU-8. First, we have fabricated membrane-like features by using a multi-exposure photolithographic technique on a single layer of SU-8, and second we have utilized a thin layer of SU-8 as a patternable adhesion layer as part of a semiconductor epitaxial lift-off process designed to transfer III-V semiconductor epitaxial layers onto lower loss host substrates. !12
机译:摘要:本文利用太赫兹时域光谱技术在0.1-1.6太赫兹范围内表征了负性光刻胶NANO XP SU-8的折射率和吸收系数。在测量的频率范围内,发现折射率是频率的相对平坦的函数,从1.8降低到1.7。吸收系数的值在给定的频率范围内呈线性增加,在1 THz时为25 cm ++ MIN @ 1 $ /。从这些数据中,我们提取出介电常数和介电损耗角正切与频率的函数,这些函数将用于未来的THz电路设计。除了这些测量之外,我们还演示了SU-8的两种新颖应用。首先,我们通过在单层SU-8上使用多重曝光光刻技术制造了类似膜的特征,其次,我们将SU-8薄层用作可图案化的粘附层,作为半导体外延剥离的一部分断开工艺设计成将III-V半导体外延层转移到损耗较低的主体衬底上。 !12

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