The characteristic infrared photoluminescence (PL) peak observed in nanocrystalline Si (nc-Si) films was found to shift to lower enegies with increasing depositin temperautre,film thickness and also by thermal annealing.For the smaples investigated here,the PL band peak ranges form 0.99 to 0.81 eV(at 77 K),with full width at half maximjm (FWHM) narrowing from 0.13 to 0.09 eV,respectively.
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