STM/STS study on high lateral density, well-aligned In-Ga-P quantum dots self-formed in GaP/InP short-period superlattices grown on GaAs(N11)A substrate

摘要

High lateral density and well-aligned In-Ga-P quantum dots on GaAs(N11)A substrate were observed by STM/STS. The superlattice cycle and gas source MBE growth temperature dependence of the self-formed structures were studied by STM. The self-formation process and mechanism were discussed based on these results. The optimum growth temperature exists at around 460/spl deg/C under the present growth conditions.