Development of Ru/Ta/sub 2/O/sub 5//Ru capacitor technology for giga-scale DRAMs

摘要

In this paper, the Ru/crystalline-Ta/sub 2/O/sub 5//Ru capacitor was investigated. We studied the electrical properties and introduced an Al/sub 2/O/sub 3/ capping layer to prohibit the degradation of the leakage current resulted from H/sub 2/ annealing. Also, the Ru cylinder-type structure was suggested as a 3-dimensional storage node shape and was confirmed in its extendibility to 0.1 /spl mu/m-scaled design rule.