System-on-a-chip has received considerable attention for future CMOS technology. One of the major technological requirements of system-on-a-chip is the ability to grow multiple gate oxide thickness simultaneously on a wafer with significantly differential oxide growth rate. System-on-a-chip has become the trend of future CMOS technologies. Combining logic circuits and several different memory elements in one chip with multiple supply voltages requires the use of multiple gate oxides or oxynitride thicknesses on the same wafer. In this paper, a novel approach to realize <500% difference in oxide growth rate is demonstrated for the first time using Vertical High Pressure (VHP) oxidation (15-25 atm @ 750-800/spl deg/C) and N implantation (1E14-3E15 atoms/cm/sup 2/).
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