A 0.2-/spl mu/m self-aligned SiGe HBT featuring 107-GHz f/sub max/ and 6.7-ps ECL

摘要

A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, was developed. The process, except the SEG, is almost completely compatible with well-established BiCMOS technology. The SiGe HBTs exhibited a peak maximum oscillation frequency of 107 GHz and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM-capacitors and high-Q inductors, were formed by chemical mechanical polishing.