A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs

摘要

A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.