MOSFETs with 9 to 13 A thick gate oxides

摘要

In this work, NMOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for a mobility reduction mechanism, namely Remote Charge Scattering, has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.