Patterned 1.54 /spl mu/m vertical cavity laser with mismatched defect-free mirrors

摘要

Novel 1.54 /spl mu/m InP-based vertical cavity surface-emitting lasers have been realized with defect-free patterned GaAs/AlGaAs mirrors. Lasers were designed with InP/InGaAsP bottom mirrors, a strain compensated InGaAsP quantum well active region, an InAlAs-oxide current confinement layer and short-stack oxidized GaAs/AlGaAs top DBR mirrors. Threshold current as low as 5 mA is obtained at 15/spl deg/C for an 8 /spl mu/m diameter laser, and up to 60 /spl mu/W of light output is recorded.