Coulomb oscillations in 100 nm and 50 nm CMOS devices

摘要

We investigate Coulomb oscillations at very low temperature in CMOS devices with nominal gate lengths of 100 nm and 50 nm and various widths. When the source drain conductance becomes smaller than the quantum e/sup 2//h, transport is dominated by resonant tunnelling through a single quantum dot formed by an impurity potential. Downscaling the channel length reduces the typical size of the impurity quantum dot pushing up the charging energy to at least several tens of Kelvin.