Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM

机译：半导体存储器件的抗噪特性-UV-EPROM与静态RAM的比较

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This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems.

机译：本文介绍了两种半导体存储器件的抗噪特性：紫外线可擦除可编程ROM（UV-EPROM）和静态RAM（SRAM）。比较了SRAM和UV-EPROM的抗噪特性，从前者由于噪声引起的故障后具有自恢复功能的观点出发，得出UV-EPROM优于SRAM的结论。安全可靠的数字系统。

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《Electromagnetic Compatibility, 1999 IEEE International Symposium on》|1999年|P.151-156|共6页
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Mutoh; A.; Nitta; S.;
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中图分类无线电电子学、电信技术;
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Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM

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