A miniaturized arrangement based on magnetostrictive dealy line (MDL) mechanism, able to be used as sensor, is realized using thin films technology. In order to obtain high-performance miniaturzed mangetostrictive delay line arrangement we used Fe_(70)B+(20)Si_6C_4 amorphous thin films as magnetostrictive sensing element because of their better magnetic and magnetoelastic characteristics than conventional magnetostrictive thin films. A monolithic design has been acieved with the electric equipment and sensing element contained onto the same silicon substrate.
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