Requirements of attenuated PSM for 0.18-um gate patterns

摘要

Abstract: Improving resolution and focus latitude is needed in the manufacturing 0.18 $mu@m LSI devices using the KrF lithography. In order to achieve this requirement, the attenuated phase shift mask (Att.PSM) has been proposed. 0.18 $mu@m gate patterns can be attained using the Att.PSM with annular illumination. However it is expected to cause a differences in the printability of mask fabrication error by using a conventional illumination when annular illumination is used. Therefore, before applying our Att.PSM to practical use, we need to investigate the printability of Att.PSM fabrication errors when using annular illumination for 0.18 $mu@m line patterns. Now, we clarify the printability of Att.PSM fabrication errors via simulation and experiments. Then we estimated the requirements of Att.PSM for 0.18 $mu@m gate patterns. To apply the Att.PSM with annular illumination, we showed the feasibility of the Att.PSM fabrication. The other hand, we understood that it is necessary to improve technology of inspection and repair. !4