The development of suitable radiation sources is a major challenge for extreme ultraviolet lithography (EUVL). For the optimization of these sources and for the determination of the parameters needed for the system design and the system integration these sources have to be characterized in terms of the absolute in-band power, the spectral distribution in the EUV spectral region and the out-band spectral regions, the spatial distribution of the emitting volume and the angular distribution of the emission. Also the source debris has to be investigated. Therefore, JENOPTIK Mikrotechnik GmbH is co-operating with the Laser Laboratorium Gottingen, the Physikalisch-Technische Bundesanstalt (PTB) and the AIXUV GmbH in developing ready-for-use metrology tools for EUVL source characterization and optimization. The set of the tools employed for EUV-source characterization is presented in detail as well as concepts of for calibration and measurement procedures.
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