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Control of defects in EUV multilayers and demonstration of at-wavelength defect characterization by EUV microscopy

机译:控制EUV多层中的缺陷并通过EUV显微镜演示波长缺陷特征

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Abstract: In EUV optical elements microscopic imperfections in multilayer coatings give rise to increased scatter and reduced integrated reflectivity. If however, the coating is in the object plane of an imaging system, the defects can be imaged. In this study, experimental work is presented on characterization of the defect density and the nature of the defects in molybdenum/silicon-multilayer coatings produced by e-beam evaporation in combination with ion-beam smoothing of the interfaces. To determine in which process steps defects are created, and how these defects can be avoided, several process parameters have been varied during single- and multilayer deposition and ion-polishing. The samples have been characterized by means of an optical particle counter and electron microscopy with energy dispersive x-ray analysis measurement capabilities. To carry out in-depth inspection of the coating, we developed a method to measure the total integrated scatter for EUV radiation from a 1 $mu@m spot. Varying the photon energy around the Si- absorption edge enabled us to distinguish between surface defects and in-depth defects that cannot be seen at the multilayer surface. !5
机译:摘要:在EUV光学元件中,多层涂层中的微观缺陷会导致散射增加和集成反射率降低。但是,如果涂层位于成像系统的物平面中,则可以对缺陷成像。在这项研究中,实验工作是通过电子束蒸发结合界面的离子束平滑化来表征钼/硅多层涂层中缺陷密度和缺陷性质的表征。为了确定在哪些工艺步骤中产生缺陷,以及如何避免这些缺陷,在单层和多层沉积和离子抛光过程中改变了几个工艺参数。样品已经通过具有能量色散X射线分析测量功能的光学粒子计数器和电子显微镜进行了表征。为了对涂层进行深入检查,我们开发了一种方法来测量1 µm @ m处EUV辐射的总积分散射。改变Si吸收边缘周围的光子能量使我们能够区分表面缺陷和在多层表面看不到的深度缺陷。 !5

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